The impact of unintentional discrete charges in a nominally undoped channel of a thin body double gate MOSFET: classical to full quantum simulation
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چکیده
A comparison of full quantum device simulation with semi-classical methods is made for an unintended single atomistic dopant at various locations in a 10 nm double gate MOSFET transistor. The density gradient method comes closest to the non-equilibrium Green function results for fails seriously when the unwanted charge is located well-within the channel.
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تاریخ انتشار 2006